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Conference Introduction

Today, the world is undergoing a profound transformation driven by intelligence and digitalization, with semiconductor science and technology serving as the engine and foundation of this revolution. The 14th Forum on Semiconductor Devices and Fabrication Technology will be held from October 21–23, 2026, at Suzhou International Expo Centre.

Focusing on the cutting-edge theme of “Optoelectronic,Acoustic and Magnetic Multimodal Semiconductor Materials and Chip Integration Technology”, the forum will address key challenges in the development of multimodal sensing and processing technologies. The advancement of multimodal materials provides the foundation for overcoming the limitations of single physical parameters and enabling ubiquitous information acquisition; multimodal device architectures serve as critical platforms for the synergistic conversion and regulation of optical, electrical, acoustic, and magnetic signals; while chip integration technologies are essential for breaking traditional signal-chain barriers and building intelligent systems integrating sensing, storage, computing, and communication.

The forum will bring together leading experts and scholars from universities, research institutes, and enterprises to discuss key topics including multimodal opto-acoustic-magnetic semiconductor materials, heterogeneous chip integration, and device fabrication optimization. Through technical presentations and in-depth discussions, the forum will explore challenges in technological innovation and industrialization, share cutting-edge achievements and application experiences, and provide insights into advanced chip integration processes and innovative multimodal device applications. The event is expected to attract approximately 150 participants, supporting professionals in strengthening expertise and gaining insights into future industry trends.

Organization

Supporting Agency

    • Bureau of Talents and Personnel,Chinese Academy of Sciences

Organizer

    • Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

Co-organizers

    • Shanghai Regional Center of Materials and Manufacturing Instrument, Chinese Academy of Sciences
    • Nanopolis Suzhou Co., Ltd.
    • Jiangsu Jitri Nano Application Technology Institute Co., LTD.

Main topics

2026 Agenda Overview

2026 Agenda Overview

Date: Oct. 21 PM
Location: A108, Suzhou International Expo Center
Moderator: Zhongming Zeng
Moderator: Baoshun Zhang
Moderator: Wenkui Lin
Date: Oct. 22 AM
Location: A108, Suzhou International Expo Center
Moderator: Zhongming Zeng
Moderator: Dongxing Zheng
Date: Oct. 22 PM
Location: Nano-Fabrication Facility
Moderator: Xiaodong Zhang
Moderator: Tianyu Sun
Date: Oct. 23 AM
Location: 398 Ruoshui Road, SEID, SIP, Suzhou
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Baoshun Zhang
（ Professor of Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences）
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Tao Chu
（ Professor of Peking University, Founder of Aijie Optoelectronics）
This paper mainly focus on our team's recent breakthroughs addressing multiple bottleneck technologies for optoelectronic chip integration, in combination with the latest trends in SOI and TFLN optoelectronic integrated chips. It systematically presents research achievements and application prospects of nearly a full suite of optoelectronic integrated devices and manufacturing technologies, including TFLN high-speed wavelength-tunable lasers, high-speed and high-linearity SOI modulators, high-efficiency nearly zero-drift TFLN modulators, polarization-independent integrated photonic chips and wavelength demultiplexers, ultra-large-scale SOI electro-optic switches with ultra-high extinction ratio, high-speed high-power GeSi photodetectors, and non-destructive post-process trimming technology for SOI integrated photonic devices.
Qiushi Chair Professor, Director of the Institute of Microelectronic Integrated Systems of of Zhejiang University, and National Distinguished Expert. He previously served as Department Manager and Principal Researcher at NEC Central Research Institute (Japan), as well as Principal Researcher and Group Leader at Japan National Institute of Advanced Industrial Science and Technology (AIST). After returning to China in 2011, he worked as a Research Professor at the Institute of Semiconductors, Chinese Academy of Sciences, Lecture Professor at the University of Chinese Academy of Sciences, and Guest Chief Scientist for central state-owned enterprises. He joined the College of Information Science and Electronic Engineering, Zhejiang University in 2017. Since 2003, he has been engaged in research on silicon photonic devices and fabrication processes. He has published more than 100 papers and holds over 50 authorized patents in China and overseas.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Yuechun Shi
（ Professor of Yongjiang Laboratory (Y-Lab)）
This presentation introduces the research background and typical technical specifications of continuous-wave (CW) high-power DFB lasers and their arrays for high-speed optical interconnect applications. It describes the fundamental design principles, methodologies and fabrication approaches of such lasers, covering multi-quantum-well epitaxial structures, optical waveguide mode field control, grating resonance, precise multi-wavelength regulation, intracavity loss and other aspects. Meanwhile, it presents recent research progress of our team on high-power DFB lasers and laser arrays, and outlines future technological development trends.
Researcher at Yongjiang Laboratory, National High-level Young Talent. His research interests mainly focus on photonic integrated chips for ultra-large-capacity optical communications and optical computing, as well as photonic chips and systems for photon sensing. He presides over the Special Project of the National Key R&D Program, General Program of the National Natural Science Foundation of China, and provincial key projects. In recent years, he has published more than 120 SCI-indexed papers in top international journals of optoelectronic information such as Optica and IEEE journals. He has been granted or filed over 30 patents, among which one patent is included in the List of 100 High-Quality Patents of Jiangsu Province. As the first author, he has compiled two professional textbooks on applied optics. The Press of Electronics Industry honored him as an “Excellent Author & Translator” and recognized the textbooks as high-quality teaching materials. The textbooks won the Merit Award in the Huaxin Cup Teaching Material Resources Competition and were selected into the provincial planning textbooks.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Qingjiang Li
（ Professor of National University of Defense Technology (NUDT)）
In the post-Moore era, artificial intelligence has witnessed explosive growth in demand for high-efficiency computing power. Developing novel neuromorphic computing chips centered on information devices and featuring integrated sensing–computing and memory–computing has emerged as one of the most promising solutions. This report focuses on the frontier of direct biomimetic visual signal processing and presents our team’s recent research and application progress in memristor-based analog-domain neuromorphic processing devices, insensor and nearsensor computing architectures, dynamic target perception systems, and biosignal processing. These findings fully demonstrate the core advantages of the analogdomain sensing–memory–computing integration paradigm in overcoming the energyefficiency bottlenecks of traditional architectures, enabling lowlatency, highprecision perception of hightemporalresolution dynamic targets and realtime efficient monitoring of biosignals. This work offers innovative solutions with high energy efficiency, low latency, and strong generalization capability for intelligent perception and edge computing in the postMoore era.
Prof. Li Qingjiang is primarily engaged in research on intelligent information devices. He is a recipient of the National Young Talents Program and has led eight major projects, including key special programs, key projects of the National Natural Science Foundation of China (NSFC), and national key R&D projects. To address the demanding requirements of high-temporal-resolution target detection and processing, he has innovatively designed novel computing chip architectures, including memristor-based neuromorphic computing chips and phase-change all-optical computing chips. These chips achieve peak computing power and energy efficiency at the internationally advanced level of the same period, and have been successfully validated in real-world image processing applications for aerospace engineering. Dr. Li has published over 100 SCI-indexed papers in leading journals such as Nature Communications and Advanced Materials, and holds 20 authorized invention patents. He has received the Second-Class Natural Science Award of Hunan Province and is a recipient of the Special Government Allowance of the State Council.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Long Li
（ Professor of Xidian University）
The increasing demand for efficient wireless communication and energy transfer has driven the development of advanced technologies that can simultaneously handle these tasks. Simultaneous wireless information and power transmission (SWIPT) has emerged as a promising solution, enabling devices to harvest energy while receiving data. Metamaterials and metasurfaces, artificial structures with sub-wavelength building blocks and tailored electromagnetic properties, have opened new avenues for addressing these challenges. We propose the concept of information and energy collaborative metamaterials and metasurfaces (IECMs), which integrates advanced metasurface designs with intelligent control mechanisms to achieve seamless collaboration between information and power. We review recent advances in this field, highlighting key innovations in architecture design, adaptive control, and multi-functional integration. The potential applications of IECM span from next-generation (6G) communication systems to energy-efficient IoT networks, offering a promising pathway toward seamless convergence of information and power.
Long Li is a professor at the School of Electronic Engineering, Xidian University, a national-level leading talent, and director of the Key Laboratory of High-Speed Circuit Design and Electromagnetic Compatibility under the Ministry of Education. His research primarily focuses on electromagnetic fields and microwave technology, with key areas including electromagnetic metamaterials/metasurfaces, antennas and microwave integrated devices, and wireless power transmission and harvesting technologies. He has published over 200 papers in Nature Communication, Advanced Materials, IEEE Transactions, Chinese Science, etc., domestic and international journals and holds more than 50 China patents and 2 USA patents. He has received numerous honors, including the Best Paper Award at ISAP 2008, the IEEE APS Raj Mittra Travel Grant Senior Researcher Award in 2015, the Shaanxi Youth Science and Technology Award in 2016, the Shaanxi Outstanding Young Scholar Fund in 2019, was selected as a Chang Jiang Distinguished Professor by the Ministry of Education in 2021, and received an International Scholarship from the Japan Society for the Promotion of Science (JSPS). He currently serves as Deputy Director of the Microwave Branch of the China Institute of Electronics, Deputy Director of the Intelligent Metasurface Technical Committee of the China Institute of Communications, Vice Chair of the MTT Society of the IEEE Xi'an Section, Co-Chair of the Technical Program Committee for APCAP 2017, and Co-Chair of AWPT 2019 and CMW 2025. He is also Associate Editor of the IEEE Antennas and Wireless Propagation Letters (AWPL), Associate Editor-in-Chief of the Applied Computational Electromagnetics Society (ACES) Journal, and Associate Editor-in-Chief of the Journal of Information and Intelligence. He is an IEEE Senior Member, IET Fellow, IAAM Fellow, and Vebleo Fellow.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Ziyu Liu
（ Research Professor of Fudan University）
As AI computing clusters keep raising requirements for bandwidth density and energy efficiency, traditional pluggable optical modules are gradually approaching bottlenecks in power consumption, bandwidth and integration density, making Co-Packaged Optics (CPO) a critical pathway to break the limits of electrical interconnections. This presentation focuses on advanced packaging technologies for CPO to analyze the core challenges brought by optoelectronic heterogeneous integration for high-density interconnection, thermal management and multi-physics co-design. It discusses the adaptability and optimization directions of key processes such as low-temperature bonding, through-silicon vias (TSV) and redistribution layers in optoelectronic convergence scenarios, and forecasts the evolution trends and application prospects of advanced packaging technologies in next-generation co-packaged optics systems.
Ziyu Liu, Young Researcher and PhD Supervisor at the School of Microelectronics, Fudan University, currently serves as Vice Dean of the School. She is a recipient of the National Young Talent Program. She received her bachelor’s degree from Jilin University and PhD from Tsinghua University. She conducted postdoctoral research at City University of Hong Kong, and joined Fudan University in 2018. Her long-term research focuses on 3D heterogeneous integration and advanced packaging technology. She has achieved a series of research results in low-temperature rapid bonding, through-silicon vias (TSV), multi-physics coupling simulation and other fields. She has published more than 90 papers and filed 31 invention patents. She presides over projects supported by the National Natural Science Foundation of China and multiple industrial collaborative projects. She has received honors including the "March 8th Red Banner Pacesetter" of Fudan University.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Wei Wang
（ Professor of Peking University）
This report discusses the importance of advanced packaging technologies against the backdrop of surging demand for computing power, and focuses on nTSV (nano Through-Silicon Via), a critical interconnect structure to systematically review its process development and reliability verification. It first analyzes the urgent demand for high-bandwidth, low-latency packaging driven by applications such as high-performance computing and AI chips, and illustrates the core value of nTSV in three-dimensional integration. Then it further investigates key process challenges of nTSV, including etching, deposition and filling, and conducts systematic evaluations of its electrical performance and thermomechanical reliability. Finally, the report summarizes current research progress and prospects the optimization directions and application potential of nTSV in heterogeneous integration and ultra-large-scale packaging.
Wei Wang, Boya Distinguished Professor of Peking University, Yangtze River Distinguished Professor, and recipient of the National Excellent Young Scientists Fund. He serves as the academic leader of the National Science and Technology Innovation Team for Micro/Nano Fabrication Technology. He is currently Vice Dean of the School of Integrated Circuits, Peking University, and Director of the National Key Laboratory of Micro and Nano Fabrication Technology. He also holds several academic appointments: Deputy Secretary-General of the Chinese Society of Micro-Nano Technology, Member of the National Integrated Circuit Standards Committee (Group Leader of the MEMS Working Group), and Member of the Special Component Standards Committee (Group Leader of the Microsystems Special Group). He serves as Associate Editor of Microfluidics and Nanofluidics, Editorial Board Member for journals including Microsystems & Nanoengineering, and Technical Committee Member of major international conferences such as IEEE MEMS, Transducers, ICEPT, CSTIC and EDTM. His long-term research focuses on micro/nano fabrication technology, especially cutting-edge research in three-dimensional integration and chiplet integration based on Through-Silicon Vias (TSV), as well as microfluidics and nanofluidics. He has published more than 200 papers in key journals and international conferences in this field, and has over 50 authorized and pending invention patents plus software copyrights, including 2 US granted patents. His research awards include the First Prize of Liaoning Provincial Science and Technology Progress Award, the Third Prize of CETC Science and Technology Progress Award, and the Gold Medal of Special Mention at the Geneva Inventions Exhibition. He has delivered invited talks at more than 20 international conferences including IEEE Sensors.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Jianming Xu
（ Professor of Sun Yat-sen University）
MEMS/MOEMS microoptoelectromechanical systems lie at the heart of optoelectronicallyintegrated intelligent microsystems. This report highlights the research work carried out by Professor Xu Jianming’s team at Sun Yatsen University on MEMS and MOEMS technologies. It elaborates on the design and micronanofabrication implementation schemes for core devices including MEMS optical switches and MOEMS metasurface lightfield modulators. Key technologies such as movable microstructures and MOEMS heterogeneous integration are analyzed. The design of supporting lownoise conditioning circuit chips for MEMS sensors is presented, together with the endside microsystem integration scheme featuring devicecircuit codesign. The technical bottlenecks arising from device fabrication, packaging coupling and multiphysicsfield coupling are discussed. Finally, the technical roadmap and industrialization prospects of MEMS/MOEMS chips for highspeed optical interconnection and intelligent perception scenarios are prospected.
Xu Jianming is a Pengcheng Peacock Talent of Shenzhen and a Leading Talent under the “HundredTalent Program” of Sun Yatsen University. He serves as ViceDean, Professor and Doctoral Supervisor of the School of Integrated Circuits, Director of the Guangdong Provincial Key Laboratory of Intelligent Microsystem Integration (MEMS), and Academic Leader of the Institute for Heterogeneous Integration and Intelligent Microsystems. He obtained his bachelor’s degree and completed his doctoratethroughdirectadmission program in the Department of Electronic Engineering at Tsinghua University, under the supervision of Academician Luo Yi. His longterm research covers optoelectronic integration, MEMS/MOEMS intelligent microsystems, heterogeneous integration, highprecision sensing chips and intelligent systems. He has led or participated as a core member in more than ten national major and key research projects. He once held the positions of Chief Designer and Chief Process Engineer, and relevant technologies have won a ministeriallevel Science and Technology Progress Award. He also holds academic positions including Deputy SecretaryGeneral of the Information Optoelectronics Special Committee of the Chinese Society for Optical Engineering. As the principal investigator, he leads his research group to investigate the mechanisms and solutions of core optoelectronic devices such as MEMS/MOEMS metasurface lightfield modulators and optical switches. Meanwhile, his team conducts research on applicationspecific conditioning circuits for MEMS/MOEMS sensors and edgeend sensing systems. Targeting intelligent perception, embodied intelligence and medicineengineering integration, his group promotes endtoend technological research spanning device, circuit and system, as well as industryuniversityresearch transformation.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Linxing Zhang
（ Professor of University of Science and Technology Beijing）
Low-dimensional ferroelectric thin films are the key functional core for high-density information storage and functional logic devices. However, their development has long been hindered by unclear polarization control mechanisms, single performance, and significant critical size effects. This report will elaborate on the development of chemical lattice strain control and synthesis strategies to design new ferroelectric film structures, achieving precise control of magnetic and optical properties. The "interphase strain" strategy is proposed, and a super tetragonal lead titanate film is designed to achieve giant polarization ferroelectric films; using the local chemical pressure approach, the low-cost chemical gel method is optimized to construct low-dimensional tetragonal layered structures, achieving ultrathin ferroelectric films; developing large-area freestanding film electro-assisted stripping method, and developing multifunctional electronic information films with switching ferroelectric photovoltaics, light signal enhancement, and anisotropic ferromagnetism.
Linxing Zhang, from Beijing University of Science and Technology, is a researcher and doctoral supervisor, a national-level high-level leading talent. His research focuses on novel information ferroelectric thin films and inorganic chemical synthesis. He has published over 80 SCI academic papers and has achieved results in journals such as Science (2 papers), Nat. Commun., Sci. Adv., JACS, and AM. He has applied for 6 national invention patents and has led or participated in 12 national-level and other projects. He has been selected as a National Natural Science Foundation Young A Award recipient, a Young Talented Person Program recipient, a Young Scientist of the National Key Research and Development Program, a member of the "Young Talent Support Program" of the Chinese Association for Science and Technology, and a member of the "National University Huang-Danian Team" of China. He has received the Young Chemistry Award of the Chinese Chemical Society, Xiaomi Young Scholar, Dingxin Young Scientist Award, the Outstanding Impact Award of China's Young Innovative Technological Figures, and Outstanding Graduate Supervisor. He serves as a young editor for journals such as PNSMI, Acta Chimica Sinica, and IJMMM, and is also a member of the Membrane Materials Expert Committee of the National Materials and Devices Scientists Think Tank of the China Academy of Sciences.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Peng Li
（ Professor of University of Electronic Science and Technology of China (UESTC)）
In recent years, quantum-geometry-induced high-order nonlinear quantum transport behaviors discovered in non-centrosymmetric systems and systems preserving combined parity-time (PT) symmetry have attracted considerable attention owing to their tremendous potential in fundamental physics and high-frequency rectifying electronic device applications. We demonstrate that the second-order nonlinear electrical response can also be excited and modulated by topological edge states in non-magnetic, centrosymmetric single crystals, breaking the conventional understanding that it's constrained by lattice symmetry. We find that asymmetry solely in electronic states is sufficient to generate notable amplitude and variation in electrical nonlinearity. The unique anisotropy exhibited by the symmetry-constrained response of high-order nonlinear transport enables us to spatially separate its contribution from those of bulk states. Benefiting from the high sensitivity of electrical nonlinearity to symmetry constraints, the combination of second- and third-order electrical nonlinearity can serve as a novel probe sensitive to electronic phase transitions, which are decoupled from conventional structural phase transitions. This method provides a highly promising route for investigating other novel unresolved electronic states and their evolution, and our work offers an innovative pathway for designing high-efficiency electronic devices including rectifiers and mixers.
Peng Li, Professor and Doctoral Supervisor, recipient of Sichuan Provincial Youth Talent Program. He received his Bachelor's, Master's and Doctoral degrees from Tianjin University. He has carried out research at the Department of Physics, Tianjin University, King Abdullah University of Science and Technology (KAUST), and the Institute for Quantum Computing, University of Waterloo, Canada. He currently works in the School of Integrated Circuits, University of Electronic Science and Technology of China (UESTC). He presides over the National Key R&D Program of China (Nanotechnology Special Project) and the General Program of the National Natural Science Foundation of China, together with more than ten research projects at or above the provincial/ministerial level. His research interests include quantum photoelectric detection, quantum information sensing, and quantum information storage. He has published over 100 academic papers, among which more than 40 papers have been published as the first or corresponding author in journals such as Nature Communications, Advanced Materials, Nano Letters, JACS, ACS Nano, Advanced Functional Materials, and Physical Review B, including 2 highly cited papers.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Weipeng Xuan
（ Professor of Hangzhou Dianzi University (HDU)）
Aiming at the requirements of miniaturization, low noise, low power consumption and high-efficiency thermal management for wearable medical devices, portable diagnostic instruments and miniature healthcare equipment, this paper investigates the applications of piezoelectric MEMS micropumps and microfans in medical systems. Through vibration of piezoelectric diaphragms and combined with acoustic resonance, fluid-structure interaction and microfluidic rectification mechanisms, the devices realize liquid delivery, gas circuit regulation and thermal dissipation for chips and components. This work mainly analyzes the operating mechanisms and performance characteristics of valveless synthetic jet structures and high-backpressure valved pump structures, and discusses their application potential in blood pressure monitoring, microfluidic drug delivery, respiratory assistance, medical gas circuit control, thermal dissipation of portable equipment and thermal management of wearable electronics. Piezoelectric MEMS micropumps/microfans feature compact structure, quiet operation, fast response and easy integration, which can provide technical support for the development of miniature medical equipment and thermal management systems.
Weipeng Xuan, Professor and Doctoral Supervisor, School of Electronic Information, Hangzhou Dianzi University. His research mainly focuses on piezoelectric MEMS devices and their applications, including wireless passive sensors, acoustic filter chips, piezoelectric MEMS micropumps/fans, etc. In recent years, he has served as principal investigator for several national and provincial research projects, such as Key Project and Young Scientist Project of the National Natural Science Foundation of China, the 173 Program of the Science and Technology Commission of the Military Commission, the National Key R&D Program of China, and Zhejiang Provincial Key R&D Program. He has published nearly 100 SCI papers as the first or corresponding author, with over 4,500 citations on Google Scholar, including 3 papers in Nature Communications and TOP journal articles in journals such as Microsystems & Nanoengineering. He holds more than 90 authorized invention patents. He serves as guest editor for multiple international journals including Sensors and Polymers, and participates in drafting several national standards.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Xuanqi Huang
（ Associate Professor of Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (SIMIT, CAS)）
Facing the urgent demand for high-frequency, high-performance RF front-end devices in 6G communications, this report presents a systematic introduction to the material preparation, device mechanisms, and fabrication processes of high-performance aluminum nitride (AlN) RF bulk acoustic wave (BAW) filters. It focuses on the phased progress achieved in large-scale scandium-doped aluminum nitride (ScAlN) thin film growth, integration processes, and filter device design and manufacturing. Furthermore, it demonstrates an integrated research framework spanning from material growth and device structure design to chip verification, providing theoretical support and key technical validation for the development of next-generation high-frequency filters for RF front-ends and advanced RF chip technologies.
Xuanqi Huang is an Associate Researcher at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences (CAS), and was selected for the CAS Pioneer Hundred Talents Program (Category B). He received Bachelor's degree from Fudan University in 2015 and Ph.D. in Electrical Engineering from Arizona State University (ASU) in 2020, during which he was awarded the 2019 National Outstanding Self-Financed Overseas Students Scholarship. He joined HiSilicon Technologies Co., Ltd., and he was responsible for the R&D of RF filter devices and chips in 2020. In 2024, he joined the Shanghai Institute of Microsystem and Information Technology, CAS, with his current research primarily focusing on wide-bandgap materials and RF devices. He has published over 60 research papers, with more than 10 journal papers as (co-)first or corresponding author, accumulating over 2,500 citations. He has also filed and been granted multiple domestic and international patents.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Yulong Fang
（ Professor of The 13th Research Institute of China Electronics Technology Group Corporation (CETC)）
Ultra-high-frequency electronics finds broad applications in fields such as ubiquitous connectivity and multi-dimensional sensing. As radio-frequency (RF) applications expand into frequency bands above 40 GHz, compound semiconductors have become the core choice for high-frequency power amplification by virtue of their advantages in high electron mobility, wide bandgap, high thermal conductivity, and high linearity. This report systematically reviews recent advances in compound semiconductor materials technology for ultra-high-frequency applications, with a particular focus on research progress in epitaxial growth and structural design across three material systems—GaAs, GaN, and InP.For GaAs PHEMTs, channel engineering has raised the room-temperature electron mobility to 9,170 cm²/V·s, approaching InP levels and demonstrating potential for W-band applications. For GaN HEMTs, strong-polarization, ultra-thin AlGaN barrier technology has been adopted to effectively suppress short-channel effects, driving device operation toward higher frequencies. For InP HEMTs, precursor optimization has been implemented to address MOCVD epitaxial interface issues, thereby supporting applications in the THz band. Collectively, these achievements provide critical material foundations for frontier domains including 6G communications, terahertz detection, and millimeter-wave radar.
Yulong Fang, Ph.D., is a Research Professor and Master's Supervisor. Since commencing his professional career, Dr. Fang has been deeply dedicated to the field of compound semiconductor foundational materials, including SiC, GaN, GaAs, and InP. He has led his team to achieve breakthroughs in multiple key technologies across various domains such as radio frequency, optoelectronics, power electronics, and sensor materials.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Dongxing Zheng
（ Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (SINANO, CAS)）
With the rapid growth of artificial intelligence and big data, information storage is facing increasing challenges in power consumption, speed, and integration density. Magnetic storage, featuring non-volatility, low power consumption, and high endurance, is regarded as a promising solution for future high-performance memory technologies. This talk will introduce the basic principles and advantages of magnetic storage, followed by an overview of how spin currents can be used to efficiently manipulate magnetization for information writing. Our recent progress in novel spin-current materials, magnetic symmetry and interface engineering, field-free magnetization switching, and low-critical-current devices will be highlighted. Emerging angular-momentum sources, including orbital currents, will also be discussed, together with their potential for developing low-power, highly stable, and highly integrated magnetic memory devices.
Dr. Dongxing Zheng is a Professor and Doctoral Supervisor, and a recipient of the National High‑Level Overseas Young Talent Program. He obtained his B.S., M.S., and Ph.D. degrees from Tianjin University. Following his doctoral graduation, he pursued research work at the Department of Physics, Tianjin University, and subsequently at King Abdullah University of Science and Technology (KAUST). In January 2026, he joined the Nano Fabrication Platform, Suzhou Institute of Nano‑Tech and Nano‑Bionics (SINANO), Chinese Academy of Sciences, as a Professor. His research interests center on frontier topics of low‑dimensional functional thin films and materials featuring strong spin‑orbit coupling. His work aims to uncover and manipulate emergent quantum states via atomic‑scale precision control, and to explore their practical implementations in next‑generation information devices. He has authored/co‑authored more than 100 SCI‑indexed publications in high‑profile international journals, including Science, Nature Nanotechnology, Matter, Nature Communications, Advanced Materials, Advanced Functional Materials, Nano Letters, and ACS Nano. He formerly held the positions of Council Member and Deputy Secretary‑General of the Tianjin Vacuum Society. He has presided over multiple research projects supported by the National Natural Science Foundation of China and the Tianjin Natural Science Foundation.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Zhaoxian Zhang
（ Professor of ULVAC (Suzhou) Technology Research and Development Co., Ltd.）
This presentation mainly introduces the applications and expansion of the ULVAC Group in the optoelectronics field. In the optoelectronics industry in recent years, AR/VR devices have been rapidly penetrating scenarios such as industry, education, and cultural tourism. Compared with glass, SiC is regarded as the next-generation material for AR/VR. At present, the ULVAC Group has already achieved a breakthrough in the etching process for optical waveguides, and is currently accelerating the development and advancement of the processing and mass-production solutions for SiC slanted gratings. In addition to AR/VR, the ULVAC Group is also actively exploring the related processes of Smart Cut thin-film smart cutting technology for the optoelectronics field.
Zhang Zhaoxian, researcher at ULVAC Research Center SUZHOU Co., Ltd. She graduated from the Department of Applied Physics at Nagoya Institute of Technology, Japan, in 2024, focusing on the application and development of inorganic materials during her studies abroad, and joined the ULVAC Group in the same year. She is currently a member of the ULVAC Group's ion implantation process R&D team, dedicated to the research, development, and application expansion of ion implantation processes. As the project leader of the Group's Smart Cut technology and process development, she is committed to the development of thin-film smart cutting technology. She has also participated in the development of equipment processes for 12-inch IGBT backside ion implantation and silicon carbide high-temperature channel implantation. In the future, she will focus on advancing process development for the optoelectronics field, contributing to the innovative development of the optoelectronics devices and advanced packaging industries.
The 13th Forum on Semiconductor Devices and Fabrication Technology——New Semiconductor Functional Materials and Devices and Their Heterogeneous Integration Technologies
Speaker
Chunhong Zeng
（ Associate Professor of Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences）
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